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RESEARCH PAPER · ACS Applied Materials & Interfaces · 2025

Improving the Thermal Stability of Indium Oxide n-Type Field-Effect Transistors by Enhancing Crystallinity through Ultrahigh-Temperature Rapid Thermal Annealing

Ching-Shuan Huang, Che‐Chi Shih, Wu‐Wei Tsai, Wei‐Yen Woon, Der‐Hsien Lien, Chao-Hsin Chien

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Improving the Thermal Stability of Indium Oxide n-Type Field-Effect Transistors by Enhancing Crystallinity through Ultrahigh-Temperature Rapid Thermal AnnealingOriginalPentacene Based Dopingless Organic Tunnel Field Effect Transistor0High Mobility and Robust Top-Gate In₂O₃ Thin Film Transistor by Ozone-Based Treatment2Cu-Embedded N-Doped Carbon: A Highly Efficient Catalyst for Enhanced Microbial Fuel Cell Performance and Wastewater Treatment2Crystallographic orientation engineering of In2O3 channel via thickness modulation for high-mobility top-gate thin-film transistors5Trade-Off between Thermally Induced Crystallization and Oxide Integrity for DRAM Application0Optimizing Annealing Temperature for Enhanced Electrical Performance and Stability of Solution-Processed In2O3 Thin-Film Transistors1Nonequilibrium Nitrogen Spike Annealing for Crystallization Enhancement Achieves High Mobility and Reliability in IGO TFTs1Printed oxide materials and devices for transparent electronics3Retention framework for analysing trapping dynamics in solution-processed metal-oxide semiconductors1Synergistic Effects of Electric Field and Thermal Treatment on Solution-Processed In 2 O 3 Thin-Film Transistors0Direct Mapping of Crystallization-Induced Trap-State Modulation and Its Impact on Local Carrier Mobilities in Indium Oxide Thin-Film Transistors1Interface-engineered top-gate indium-tin-oxide thin-film transistors with 2-nm channels0Reversible Thickness Engineering in Amorphous In 2 O 3 Transistors1Decoupling Reversible Interface Trapping and Irreversible Bulk Transitions in Solution-Processed Indium Zinc Oxide Thin-Film Transistors1Light‐Absorbing‐Layer‐Free Flash Lamp Annealing for High‐Throughput Fabrication of All‐Solution‐Processed Oxide Electronics0Overcoming the mobility–reliability trade-off in BEOL-compatible In2O3-based FETs through synergistic doping and prolonged annealing0

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16 direct citing papers saved.

  1. Pentacene Based Dopingless Organic Tunnel Field Effect Transistor

    IEEE India Council International Conference (INDICON) · 2024-12-19

    E Nivedha, Rajesh Agarwal

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  2. High Mobility and Robust Top-Gate In₂O₃ Thin Film Transistor by Ozone-Based Treatment

    IEEE Journal of the Electron Devices Society · 2025-01-01

    Ching-Shuan Huang, Tsu-Lang Shih, Che‐Chi Shih, Wu‐Wei Tsai, Chien‐Wei Chen, Yu-Hsuan Yu, Wei‐Yen Woon, Chao-Hsin Chien

    Read original paper ↗ ·

  3. Cu-Embedded N-Doped Carbon: A Highly Efficient Catalyst for Enhanced Microbial Fuel Cell Performance and Wastewater Treatment

    ACS Applied Materials & Interfaces · 2025-06-25

    Xiao Hui Yang, Shuting Huang, Dongyun Chen, Shi-hong Dong, Najun Li, Qingfeng Xu, Hua Li, Jianmei Lu

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  4. Crystallographic orientation engineering of In2O3 channel via thickness modulation for high-mobility top-gate thin-film transistors

    Journal of Alloys and Compounds · 2025-07-01

    Chae-Eun Oh, Sung‐Min Yoon

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  5. Trade-Off between Thermally Induced Crystallization and Oxide Integrity for DRAM Application

    ACS Omega · 2025-08-06

    Moonsoo Kim, Junehyeong Cho, Kyeong‐Bae Lee, Hwan-gyu Lee, Junho Noh, S.H. Park, Byoungdeog Choi

    Read original paper ↗ ·

  6. Optimizing Annealing Temperature for Enhanced Electrical Performance and Stability of Solution-Processed In2O3 Thin-Film Transistors

    Micromachines · 2025-09-26

    Taehui Kim, Seullee Lee, Ye-Won Lee, Dongwook Kim, Youngjun Yun, Jin‐Hyuk Bae, Hyeonju Lee, Jaehoon Park

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  7. Nonequilibrium Nitrogen Spike Annealing for Crystallization Enhancement Achieves High Mobility and Reliability in IGO TFTs

    Advanced Electronic Materials · 2025-09-29

    Kuo Zhang, Jiayi Wang, Ziheng Bai, Chunyu Zhang, Tong Yu, Yang J. Xu, Nannan You, Rui Chen, Zhicheng Wu, Di Geng, Guanhua Yang, Shengkai Wang, Ling Li, Ming Liu

    Read original paper ↗ ·

  8. Printed oxide materials and devices for transparent electronics

    Journal of Physics D Applied Physics · 2025-10-30

    Sushree Sangita Priyadarsini, Nehru Devabharathi, Faisal M Sha, Subho Dasgupta, Suresh Kumar Garlapati

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  9. Retention framework for analysing trapping dynamics in solution-processed metal-oxide semiconductors

    NPG Asia Materials · 2025-11-07

    Dongwook Kim, Hyeonju Lee, Hyunji Shin, Youngjun Yun, Jin‐Hyuk Bae, Jaehoon Park

    Read original paper ↗ ·

  10. Synergistic Effects of Electric Field and Thermal Treatment on Solution-Processed In 2 O 3 Thin-Film Transistors

    ACS Applied Electronic Materials · 2026-03-02

    Han-Lin Zhao, Xiao-Lin Wang, Kwan-Jun Heo, Suchang Yoo, Sung‐Jin Kim

    Read original paper ↗ ·

  11. Direct Mapping of Crystallization-Induced Trap-State Modulation and Its Impact on Local Carrier Mobilities in Indium Oxide Thin-Film Transistors

    Nano Letters · 2026-03-06

    Yuhyeon Oh, Jeong Eun Oh, Seunghyo Park, S. Woon Lee, Jae Kyeong Jeong, Seunghun Hong

    Read original paper ↗ ·

  12. Interface-engineered top-gate indium-tin-oxide thin-film transistors with 2-nm channels

    Applied Physics Letters · 2026-03-16

    Tsung‐Che Chiang, Yuming Zhang, Jo‐Lin Chen, Chen-Kai Hsu, Yue Kuo, Po-Tsun Liu

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  13. Reversible Thickness Engineering in Amorphous In 2 O 3 Transistors

    Nano Letters · 2026-04-13

    Yi-Yu Pan, Chu-Hsiu Hsu, Robert Tseng, Sung-Tsun Wang, Yu-Cheng Chang, Shih-Chieh Chen, T. Kimura, Yann­‐Wen Lan, Der‐Hsien Lien

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  14. Decoupling Reversible Interface Trapping and Irreversible Bulk Transitions in Solution-Processed Indium Zinc Oxide Thin-Film Transistors

    Nanomaterials · 2026-07-16

    Dongwook Kim, Hyunji Shin, Hyeonju Lee, Youngjun Yun, Jin‐Hyuk Bae, Jaehoon Park

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  15. Light‐Absorbing‐Layer‐Free Flash Lamp Annealing for High‐Throughput Fabrication of All‐Solution‐Processed Oxide Electronics

    Advanced Science · 2026-08-13

    Zetong Li, Wei He, Guangji Wang, Jingwei Zhang, Zhimin Chai, Xinchun Lu

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  16. Overcoming the mobility–reliability trade-off in BEOL-compatible In2O3-based FETs through synergistic doping and prolonged annealing

    Applied Physics Letters · 2026-10-05

    H H Liu, Le Yan, Gan Liu, Wei Shi, Weibing Hao, Xinming Li, Dong Zhang, Kai Ni, Chen Sun, Xiao Gong

    Read original paper ↗ ·
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