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RESEARCH PAPER · Surfaces and Interfaces · 2024

Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption

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Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorptionOriginalPlanar hybrid UV-C photodetectors based on aerosol-jet printed PEDOT:PSS on different Ga2O3 thin films10Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique2Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy1Absorption anisotropy of orthorhombic single-domain κ-Ga2O3 from infrared to ultraviolet: Phonons and bandgaps2κ-Ga 2 O 3 /(B)GaAs/GaAs Heterostructures: Study of Optically Active Defects, Design, and Modeling of Solar Cells Based on These Heterostructures2Absorption of orthorhombic multi-domain κ-(In x Ga 1− x ) 2 O 3 : bandgap energies by an anisotropic analysis0Fermi level pinning effect investigation on delafossite CuGaO2/β-Ga2O3 heterojunction: application in UV-photodetectors1

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  1. Planar hybrid UV-C photodetectors based on aerosol-jet printed PEDOT:PSS on different Ga2O3 thin films

    Materials Today Physics · 2025-01-28

    Francesco Mattei, Davide Vurro, Donato Spoltore, Maura Pavesi, Payam Rajabi Kalvani, Stefano Pasini, Gianluca Foti, Pasquale D’Angelo, Alessio Bosio, Andrea Baraldi, Francesco Mezzadri, Piero Mazzolini, Salvatore Vantaggio, Matteo Bosi, L. Seravalli, Giuseppe Tarabella, A. Parisini, R. Fornari

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  2. Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique

    Journal of Alloys and Compounds · 2025-04-22

    Francesco Stancari, Francesco Pattini, Francesco Mezzadri, Giulia Spaggiari, Stefano Rampino, A. Parisini, Maura Pavesi, Andrea Baraldi, Marzio Rancan, Lidia Armelao, R. Fornari

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  3. Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy

    Advanced Electronic Materials · 2025-07-03

    Payam Rajabi Kalvani, A. Parisini, Maura Pavesi, Francesco Mattei, Piero Mazzolini, Kingsley O. Egbo, Oliver Bierwagen, Abderrahim Moumen, Salvatore Vantaggio, Samaneh Shapouri, Matteo Bosi, L. Seravalli, R. Fornari

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  4. Absorption anisotropy of orthorhombic single-domain κ-Ga2O3 from infrared to ultraviolet: Phonons and bandgaps

    Applied Physics Letters · 2025-10-23

    Elias Kluth, Temma Ogawa, Hiroyuki Nishinaka, R. Goldhahn, Martin Feneberg

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  5. κ-Ga 2 O 3 /(B)GaAs/GaAs Heterostructures: Study of Optically Active Defects, Design, and Modeling of Solar Cells Based on These Heterostructures

    ACS Omega · 2025-12-12

    Tarek Hidouri, A. Parisini, Babban Kumar Ravidas, J. Jiménez, Dip Prakash Samajdar, R. Fornari

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  6. Absorption of orthorhombic multi-domain κ-(In x Ga 1− x ) 2 O 3 : bandgap energies by an anisotropic analysis

    Japanese Journal of Applied Physics · 2026-01-21

    Elias Kluth, Alexander Karg, Martin Eickhoff, R. Goldhahn, Martin Feneberg

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  7. Fermi level pinning effect investigation on delafossite CuGaO2/β-Ga2O3 heterojunction: application in UV-photodetectors

    Solar Energy · 2026-05-18

    Masoud Abrari, Shahab Sharifi Malvajerdi, Majid Ghanaatshoar, Seyed Majid Mohseni

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