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RESEARCH PAPER · Advanced Functional Materials · 2024

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

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Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma FluorinationOriginalAtomic layer deposition of oxide semiconductor thin films for transistor applications: a review32Ultrathin In2O3 thin-film transistors deposited from trimethylindium and ozone4Breaking the Trade‐Off Between Mobility and On–Off Ratio in Oxide Transistors31Enhanced Mobility and Stability of Amorphous IZO TFTs With Homojunction Formation and Back-Channel Engineering5High-performance metal oxide TFTs for flexible displays: materials, fabrication, architecture, and applications25Ultrahigh field-effect mobility of 147.5 cm2/Vs in ultrathin In2O3 transistors via passivating the surface of polycrystalline HfO2 gate dielectrics11Structure modulation based on SnO2/In2O3 heterojunction to improve ethanol sensitivity at room temperature13The effects of CF4 plasma treatment on the performance, gate bias stability, and defect characteristics of low-temperature indium-gallium-tin-oxide thin-film transistors7Stabilizing ALD Ultrathin In₂O₃ TFTs Under High Humidity Ambient by an Added IGZO Layer10Artificial Solid Electrolyte Interphases Stabilized Zn Metal Anodes for High-Rate and Long-Lifespan Aqueous Batteries16Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing0High‐Performance 2D C‐Axis‐Aligned Crystalline Oxide Semiconductor Heterostructure Transistors via Aqueous Solution Deposition1Electrical Performance Trade-Off in Ultrathin Channel IGZTO TFTs2Three-dimensional CNTs/TiO2 self-supporting hybrid fabrics constructed via atomic layer deposition for visible-light-enhanced catalytic activity3Eco-Friendly Fabrication of 2D a-SnOx Thin-Film Transistors Derived from Deep Eutectic Solvents0Organic field‐effect transistors: Materials design, device physics, and contact engineering for high‐performance flexible electronics2In2O3: An Oxide Semiconductor for Thin-Film Transistors, a Short Review5Programmable Interface Atomic Rearrangement for Spatiotemporal Thermal Radiation Tailoring7ALD-Driven Ultrathin IGZO Neuromorphic Transistors with Defect-Engineered 1/ f Noise for Stable Multimodal Information Encryption2Gallium Oxide RRAM: Materials, Fundamentals and Applications3Review of Oxide Semiconductors and Their Applications in Logic, DRAM, and Monolithic 3D Integration8Fluorine Plasma-Induced Modulation of Electrical Performance and Reliability in IGZTO TFTs0One‐Step, High‐Removal‐Rate and Low‐Damage Chemical Mechanical Polishing of InP Enabled by Hydrolysis Activated PF 6 − with In Situ Fluoride Passivation2Synergistic enhancement of indium–zinc oxide thin-film transistor performance through CF 4 plasma treatment and laser annealing technology0In situ nitrogen doping enables highly stable InSnZnON thin-film transistors1Device Variability and Bias-Stress Stability in Fluorine Plasma-Engineered IGZTO Thin-Film Transistors0Oxygen Vacancy Passivation by Compensation Technique to Address the Conflict Between Mobility and Threshold Voltage of Heterojunction Oxide Transistors0Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM0

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  1. Atomic layer deposition of oxide semiconductor thin films for transistor applications: a review

    Journal of Materials Chemistry C · 2024-01-01

    Inhong Hwang, Minki Choe, Dahui Jeon, In-Hwan Baek

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  2. Ultrathin In2O3 thin-film transistors deposited from trimethylindium and ozone

    Nanotechnology · 2024-07-31

    Jianzhang Zhu, Jinxiong Li, Shanshan Ju, Lei Lü, Shengdong Zhang, Xinwei Wang

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  3. Breaking the Trade‐Off Between Mobility and On–Off Ratio in Oxide Transistors

    Advanced Materials · 2024-12-09

    Yu‐Cheng Chang, Sung‐Tsun Wang, Yung‐Ting Lee, Ching‐Shuan Huang, Chu‐Hsiu Hsu, Tzu-Ting Weng, Chang‐Chang Huang, Chien‐Wei Chen, Tsung‐Te Chou, C.W. Chang, Wei‐Yen Woon, Chun‐Liang Lin, Jack Yuan‐Chen Sun, Der‐Hsien Lien

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  4. Enhanced Mobility and Stability of Amorphous IZO TFTs With Homojunction Formation and Back-Channel Engineering

    IEEE Journal of the Electron Devices Society · 2025-01-01

    Kaiyuan Lai, Yurong Liu, Ming Li, Dantong Wang, Yifan Li, Ruohe Yao, K. W. Geng, Weijian Liu

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  5. High-performance metal oxide TFTs for flexible displays: materials, fabrication, architecture, and applications

    Soft Science · 2025-01-09

    Seong‐Pil Jeon, Jeong‐Wan Jo, Dayul Nam, Yong‐Hoon Kim, Sung Kyu Park

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  6. Ultrahigh field-effect mobility of 147.5 cm2/Vs in ultrathin In2O3 transistors via passivating the surface of polycrystalline HfO2 gate dielectrics

    Applied Physics Letters · 2025-01-20

    Taikyu Kim, Seung Ho Ryu, Jihoon Jeon, Taeseok Kim, In-Hwan Baek, Seong Keun Kim

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  7. Structure modulation based on SnO2/In2O3 heterojunction to improve ethanol sensitivity at room temperature

    Sensors and Actuators B Chemical · 2025-01-23

    Tao Wang, Ruixiong Zhai, Taihong Huang, Dehao Kong, Yuxu Bao, Peng Yun Song

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  8. The effects of CF4 plasma treatment on the performance, gate bias stability, and defect characteristics of low-temperature indium-gallium-tin-oxide thin-film transistors

    Materials Science in Semiconductor Processing · 2025-02-13

    Dongbhin Kim, Kyeong‐Bae Lee, Junho Noh, DongHyun Kim, Hyunsoo Park, Byoungdeog Choi

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  9. Stabilizing ALD Ultrathin In₂O₃ TFTs Under High Humidity Ambient by an Added IGZO Layer

    IEEE Electron Device Letters · 2025-03-06

    Shanshan Ju, Jinxiong Li, Yupu Tang, Wei Ping Qian, Fangxing Zhang, Jianzhang Zhu, Xu Tian, Songjie Yang, Lining Zhang, Lei Lü, Shengdong Zhang, Xinwei Wang

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  10. Artificial Solid Electrolyte Interphases Stabilized Zn Metal Anodes for High-Rate and Long-Lifespan Aqueous Batteries

    Electrochimica Acta · 2025-03-15

    Xinyu Lv, Xin Yong Gu, Tian Ren, Hubiao Pan, Xinyu Chen, Jian Hua Yang, Dandan Liu, Mingbo Wu

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  11. Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing

    IEEE Transactions on Electron Devices · 2025-06-04

    Qingqing Hu, Jiawei Yang, Shanshan Jiang, Bo He, Bin Bao, Qian Gao, Can Fu, Huanhuan Wei, Gang He

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  12. High‐Performance 2D C‐Axis‐Aligned Crystalline Oxide Semiconductor Heterostructure Transistors via Aqueous Solution Deposition

    Advanced Electronic Materials · 2025-06-17

    Wangying Xu, Junling Zhou, Jierui Lin, Chen Wu, Yanwei Li, Shuqiong Lan

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  13. Electrical Performance Trade-Off in Ultrathin Channel IGZTO TFTs

    IEEE Transactions on Electron Devices · 2025-07-09

    Kai Chen, Ran Cheng, Rui Zhang, Junkang Li, Yunlong Li

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  14. Three-dimensional CNTs/TiO2 self-supporting hybrid fabrics constructed via atomic layer deposition for visible-light-enhanced catalytic activity

    Journal of Photochemistry and Photobiology A Chemistry · 2025-07-15

    Jianhua Feng, Tianlin Ma, H. J. Yang, Gangling Chen

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  15. Eco-Friendly Fabrication of 2D a-SnOx Thin-Film Transistors Derived from Deep Eutectic Solvents

    Materials · 2025-11-27

    Christophe Avis, Jin Hyuk Jang

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  16. Organic field‐effect transistors: Materials design, device physics, and contact engineering for high‐performance flexible electronics

    Information & Functional Materials · 2025-12-01

    Fenglan Kuang, F. Q. Wang, Dawei Duan, Yicong Ma, Xiaokang Sun, Soumitra Satapathi, Annie Ng, Haoran Lin, Zheng Li, Yufei Zhong, Hanlin Hu

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  17. In2O3: An Oxide Semiconductor for Thin-Film Transistors, a Short Review

    Molecules · 2025-12-12

    Christophe Avis, Jin Hyuk Jang

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  18. Programmable Interface Atomic Rearrangement for Spatiotemporal Thermal Radiation Tailoring

    Research · 2026-01-01

    Xinye Liao, Mingyu Luo, Zhaojian Zhang, Qi Jiang, Xin Li, Junxiang Zeng, Yule Wang, Xinpeng Jiang, Jie Nong, Jiagui Wu, Dongqing Liu, Huan Chen, Xin He, Xiaohu Wu, Qiang Li, Junbo Yang

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  19. ALD-Driven Ultrathin IGZO Neuromorphic Transistors with Defect-Engineered 1/ f Noise for Stable Multimodal Information Encryption

    The Journal of Physical Chemistry Letters · 2026-01-09

    Jiawei Yang, Bingyan Wang, Bo He, Peng Chen, Haifeng Xu, Shanshan Jiang, Huanhuan Wei, Prof. Gang He

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  20. Gallium Oxide RRAM: Materials, Fundamentals and Applications

    Advanced Materials Technologies · 2026-01-24

    Zihao Li, Xiangxiang Gao, Yuelong Feng, Dongsheng Cui, Jian Li, Zhenhua Lin, Yue Hao, Jingjing Chang

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  21. Review of Oxide Semiconductors and Their Applications in Logic, DRAM, and Monolithic 3D Integration

    ACS Applied Electronic Materials · 2026-01-30

    Kexin Wang, Jianshi Tang, Bin Gao, He Qian, Huaqiang Wu

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  22. Fluorine Plasma-Induced Modulation of Electrical Performance and Reliability in IGZTO TFTs

    IEEE International Reliability Physics Symposium proceedings · 2026-03-22

    Kai Chen, Rui Zhang, Yunlong Li

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  23. One‐Step, High‐Removal‐Rate and Low‐Damage Chemical Mechanical Polishing of InP Enabled by Hydrolysis Activated PF 6 − with In Situ Fluoride Passivation

    Advanced Science · 2026-04-02

    Shigong Fu, Jianwei Zhou, C. T. Wang, Yanchao Ge, Chong Luo, Yuhang Qi

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  24. Synergistic enhancement of indium–zinc oxide thin-film transistor performance through CF 4 plasma treatment and laser annealing technology

    Journal of Physics D Applied Physics · 2026-05-05

    Zijuan Han, Xiao Li, Hua Chen, Jisheng Pan, Fenglin Zhang, Tengbo Lv, Lei Lu

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  25. In situ nitrogen doping enables highly stable InSnZnON thin-film transistors

    Applied Physics Letters · 2026-06-22

    Tao Liu, Chunlan Wang, Xin Zhou, Zhiyang Jin, Jingli Wang, Xuming Zou

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  26. Device Variability and Bias-Stress Stability in Fluorine Plasma-Engineered IGZTO Thin-Film Transistors

    IEEE Transactions on Electron Devices · 2026-07-27

    Kai Chen, Rui Zhang, Yunlong Li

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  27. Oxygen Vacancy Passivation by Compensation Technique to Address the Conflict Between Mobility and Threshold Voltage of Heterojunction Oxide Transistors

    Small Structures · 2026-07-27

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  28. Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

    Advanced Functional Materials · 2026-07-30

    권시현, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon

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