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RESEARCH PAPER · PRX Energy · 2022

Computational Identification of Ternary Wide-Band-Gap Oxides for High-Power Electronics

Emily M. Garrity, Cheng‐Wei Lee, Prashun Gorai, M. Brooks Tellekamp, Andriy Zakutayev, Vladan Stevanović

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13 direct citing papers in this saved network. Explore the next layer with second-order citations.

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42 direct citing works

Computational Identification of Ternary Wide-Band-Gap Oxides for High-Power ElectronicsOriginalOptical-vibration properties and pressure-induced phase transition in (In,Sc)2Ge2O7 pyrogermanates2Polymorphism of group-IV carbides: Structures, (meta)stability, electronic, and transport properties11Defect Chemistry and Doping of Ultrawide Band Gap (III)BO 3 Compounds7Nonlinear optics at epsilon near zero: From origins to new materials60Computational Insights into Phase Equilibria between Wide-Gap Semiconductors and Contact Materials4Dopants and defects in ultra-wide bandgap semiconductors60Reliable operation of Cr2O3:Mg/β-Ga2O3 p–n heterojunction diodes at 600 °C37Toward The Advancement Of High-Efficiency P-Type Doping In Iii-Nitrides: Novel Beryllium Doping Techniques0MELRSNet for accelerating the exploration of novel ultrawide bandgap semiconductors0Stability, growth, and doping of In2(Si, Ge)2O7: Promising n-type wide-bandgap semiconductors3Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy5Investigation of Hole Dopability in Oxygen-2p-Dominated Bands6Computational and experimental pathways to next-generation ultrawide-band-gap oxide semiconductors0

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13 direct citing papers saved.

  1. Optical-vibration properties and pressure-induced phase transition in (In,Sc)2Ge2O7 pyrogermanates

    Ceramics International · 2023-05-07

    Jéssica Ivone Viegas, Antonio José Barros dos Santos, Waldeci Paraguassu, Roberto Luiz Moreira, Anderson Dias

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  2. Polymorphism of group-IV carbides: Structures, (meta)stability, electronic, and transport properties

    Physical Review Materials · 2023-05-12

    Matthew Jankousky, Emily M. Garrity, Vladan Stevanović

    Read original paper ↗ ·

  3. Defect Chemistry and Doping of Ultrawide Band Gap (III)BO 3 Compounds

    Chemistry of Materials · 2023-11-22

    Emily M. Garrity, Kingsley O. Egbo, Cheng‐Wei Lee, Andriy Zakutayev, Vladan Stevanović

    Read original paper ↗ ·

  4. Nonlinear optics at epsilon near zero: From origins to new materials

    Applied Physics Reviews · 2024-03-01

    Dhruv Fomra, Adam R. Ball, Samprity Saha, Jingwei Wu, Md. Sojib, Amit Kumar Agrawal, Henri J. Lezec, Nathaniel Kinsey

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  5. Computational Insights into Phase Equilibria between Wide-Gap Semiconductors and Contact Materials

    ACS Applied Electronic Materials · 2024-04-02

    Cheng‐Wei Lee, Andriy Zakutayev, Vladan Stevanović

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  6. Dopants and defects in ultra-wide bandgap semiconductors

    Current Opinion in Solid State and Materials Science · 2024-04-08

    John L. Lyons, Darshana Wickramaratne, Anderson Janotti

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  7. Reliable operation of Cr2O3:Mg/β-Ga2O3 p–n heterojunction diodes at 600 °C

    Applied Physics Letters · 2024-04-08

    William A. Callahan, Kingsley O. Egbo, Cheng‐Wei Lee, David S. Ginley, Ryan O’Hayre, Andriy Zakutayev

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  8. Toward The Advancement Of High-Efficiency P-Type Doping In Iii-Nitrides: Novel Beryllium Doping Techniques

    Unknown journal · 2024-05-01

    Benjamin McEwen

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  9. MELRSNet for accelerating the exploration of novel ultrawide bandgap semiconductors

    Microstructures · 2025-03-18

    Z.J. Zhang, Hongzhou Song, Yinghui Ji, Yan Cui, Xiang Li, Zili Zhang, Ziming Cai, Jie Zhang, Yunyi Wu, Huanxin Li, Bing Luo

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  10. Stability, growth, and doping of In2(Si, Ge)2O7: Promising n-type wide-bandgap semiconductors

    APL Materials · 2025-07-01

    Cheng‐Wei Lee, Kingsley O. Egbo, Emily M. Garrity, Matthew Jankousky, Henry Garland, Andriy Zakutayev, Vladan Stevanović

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  11. Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy

    APL Materials · 2025-10-01

    Jacob Steele, J. M. Chen, Tamá Burrell, Naomi A. Pieczulewski, Debaditya Bhattacharya, Kathleen T. Smith, Katie R. Gann, Michael O. Thompson, Huili Grace Xing, Debdeep Jena, David Anthony Muller, M. D. Williams, M. K. Indika Senevirathna, Darrell G. Schlom

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  12. Investigation of Hole Dopability in Oxygen-2p-Dominated Bands

    Chemistry of Materials · 2025-11-19

    Thi Ngoc Huyen Vu, Yu Kumagai

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  13. Computational and experimental pathways to next-generation ultrawide-band-gap oxide semiconductors

    Nano Convergence · 2026-02-04

    Sieun Chae, J. H. Kim, Joshua R. Anderson, Sanghyun Hong, Yaser Mike Banad, Hanjong Paik

    Read original paper ↗ ·
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