RESEARCH PAPER · APL Materials · 2025
Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy
Jacob Steele, J. M. Chen, Tamá Burrell, Naomi A. Pieczulewski, Debaditya Bhattacharya, Kathleen T. Smith, Katie R. Gann, Michael O. Thompson, Huili Grace Xing, Debdeep Jena, David Anthony Muller, M. D. Williams, M. K. Indika Senevirathna, Darrell G. Schlom
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