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RESEARCH PAPER · IEEE Electron Device Letters · 2020

The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors

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The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film TransistorsOriginalEffect of annealing ambient gases on the bias stability of amorphous SnSiO thin-film transistors3Influence of linear permittivity on thermally-induced nonlinear optical properties of aluminum-doped zinc oxide thin films: the visible range0Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors242020 Index IEEE Electron Device Letters Vol. 411Atomic Layer Deposition Deposited Al-Doped ZnO Films for Transistor Application0Hydrogenation of Mg-Doped InGaZnO Thin-Film Transistors for Enhanced Electrical Performance and Stability33Effect of RF Sputtering Power Density and Post Thermal Annealing Temperature on the Performance of Aluminium-Doped Zinc Oxide Thin-Film Transistor0Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors26Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers19Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process20Back-End-of-Line Compatible InSnO/ZnO Heterojunction Thin-Film Transistors With High Mobility and Excellent Stability20P‐1.12: Vacuum Annealing Treatment on High‐Performance AlZnO Thin Film Transistors0P‐1.17: Ultraviolet Light Response of Amorphous Oxide Thin‐Film Transistors with Double‐Stacked Channel Layers4Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors7Hf-doped ZnO transistor with high bias stability and high field-effect mobility by modulation of oxygen vacancies and interfaces29Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors26Effect of Rapid Cooling Using Low-Temperature Deionized Water on Ingazno (Igzo) Thin-Film Transistors0Quantitative Insight of Annealing Atmosphere-Induced Device Performance and Bias Stability in a Ga-Doped InZnSnO Thin-Film Transistors10Enhancing the Stability and Mobility of TFTs via Indium–Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient10Impact of precursor dosing on the surface passivation of AZO/AlO x stacks formed using atomic layer deposition5Mechanistic Understanding of Gas Sensing in Palladium Nanoparticles-Decorated Porous ZnO Nanosheets: Correlating Energy Barrier and Ionized Oxygen Species with Sensing Performance0Performance Enhancement of InGaZnO Thin-Film Transistors via Rapid Cooling Process and Their Application in Logic Circuits0Retention framework for analysing trapping dynamics in solution-processed metal-oxide semiconductors1Mechanistic understanding of gas sensing in palladium nanoparticles-decorated porous ZnO nanosheets: Correlating energy barrier and ionized oxygen species with sensing performance1Layer-Selective Crystallization of Indium–Gallium Oxide and Indium–Gallium–Zinc Oxide Bilayer Channel Induced by Annealing After UV Treatment for High-Performance Oxide Thin-Film Transistors0Carbon Nanotube Doping by Prolonged Ultrasonication Treatment for Improving Electrical Properties of In 2 O 3 Thin-Film Transistors0

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  1. Effect of annealing ambient gases on the bias stability of amorphous SnSiO thin-film transistors

    Semiconductor Science and Technology · 2020-08-05

    Jianwen Yang, Duo Cao, Dong Lin, Feng Liu

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  2. Influence of linear permittivity on thermally-induced nonlinear optical properties of aluminum-doped zinc oxide thin films: the visible range

    Optical Materials Express · 2020-10-14

    Husam Hamza Abu-Safe

    Read original paper ↗ ·
  3. Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

    Electronics · 2020-11-07

    Hwan-Seok Jeong, Hyun Seok Cha, Seong Hyun Hwang, Hyuck‐In Kwon

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  4. 2020 Index IEEE Electron Device Letters Vol. 41

    IEEE Electron Device Letters · 2020-12-01

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  5. Atomic Layer Deposition Deposited Al-Doped ZnO Films for Transistor Application

    IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 2021-04-08

    Junchen Dong, Qi Li, Dedong Han, Yi Wang, Xing Zhang

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  6. Hydrogenation of Mg-Doped InGaZnO Thin-Film Transistors for Enhanced Electrical Performance and Stability

    IEEE Transactions on Electron Devices · 2021-05-18

    Ablat Abliz

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  7. Effect of RF Sputtering Power Density and Post Thermal Annealing Temperature on the Performance of Aluminium-Doped Zinc Oxide Thin-Film Transistor

    International Symposium on Next-Generation Electronics · 2021-07-09

    Jinyang Huang, Meng Zhang, Yuyang Yang, Xincheng Zhang, Yuhuang Zeng, Zhiying Chen, Yan Yan, Juin Jei Liou

    Read original paper ↗ ·
  8. Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

    Membranes · 2021-11-26

    Qi Li, Junchen Dong, Dedong Han, Yi Wang

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  9. Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

    Micromachines · 2021-12-12

    Wen Zhang, Zenghui Fan, Ao Shen, Chengyuan Dong

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  10. Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

    Nanomaterials · 2022-01-05

    Kai Zhao, Jingye Xie, Yudi Zhao, Dedong Han, Yi Wang, Bin Liu, Junchen Dong

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  11. Back-End-of-Line Compatible InSnO/ZnO Heterojunction Thin-Film Transistors With High Mobility and Excellent Stability

    IEEE Electron Device Letters · 2022-06-21

    Qi Li, Junchen Dong, Dedong Han, Jingyi Wang, Dengqin Xu, Xing Zhang, Yi Wang

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  12. P‐1.12: Vacuum Annealing Treatment on High‐Performance AlZnO Thin Film Transistors

    SID Symposium Digest of Technical Papers · 2022-10-01

    Dengqin Xu, Junchen Dong, Jingyi Wang, Qi Li, Yi Wang, Dedong Han

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  13. P‐1.17: Ultraviolet Light Response of Amorphous Oxide Thin‐Film Transistors with Double‐Stacked Channel Layers

    SID Symposium Digest of Technical Papers · 2022-10-01

    Zenghui Fan, Wen Zhang, Ao Shen, Chengyuan Dong

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  14. Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors

    Micromachines · 2022-11-02

    Qi Li, Dedong Han, Junchen Dong, Dengqin Xu, Yue Li, Yi Wang, Xing Zhang

    Read original paper ↗ ·
  15. Hf-doped ZnO transistor with high bias stability and high field-effect mobility by modulation of oxygen vacancies and interfaces

    Journal of Material Science and Technology · 2023-05-24

    Yushu Tang, Pengwei Tan, Yuanyuan Luo, Zheng Zhang, Liyang Luo, Guotao Duan

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  16. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors

    Micromachines · 2023-07-08

    Young‐Min Han, Dong Hyun Lee, Eou‐Sik Cho, Sang Jik Kwon, Hocheon Yoo

    Read original paper ↗ ·
  17. Effect of Rapid Cooling Using Low-Temperature Deionized Water on Ingazno (Igzo) Thin-Film Transistors

    SSRN Electronic Journal · 2024-01-01

    Shuo Zhang, Bin Liu, Xianwen Liu, Xuyang Li, Dan Kuang, Qi Guo Yao, Congyang Wen, Xiaorui Zi, Ziyan Jia, Guangcai Yuan, Jian Guo, Ce Ning, Dawei Shi, Feng Wang, Zhinong Yu

    Read original paper ↗ ·
  18. Quantitative Insight of Annealing Atmosphere-Induced Device Performance and Bias Stability in a Ga-Doped InZnSnO Thin-Film Transistors

    IEEE Transactions on Electron Devices · 2024-07-18

    Nayoung Choi, Min Jung Kim, Hyunmin Hong, Dong Yeob Shin, Jinyoung Go, Teklebrahan Gebrekrstos Weldemhret, Kwangsik Jeong, Kwun‐Bum Chung

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  19. Enhancing the Stability and Mobility of TFTs via Indium–Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient

    Nanomaterials · 2024-07-26

    S. J. Lim, Dong-Gyun Mah, Won-Ju Cho

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  20. Impact of precursor dosing on the surface passivation of AZO/AlO x stacks formed using atomic layer deposition

    Energy Advances · 2025-01-01

    Yan Wang, Theodore D. C. Hobson, Jack E. N. Swallow, Shona McNab, John O’Sullivan, Anastasia H. Soeriyadi, Xinya Niu, Rebekah Fraser, Akash Dasgupta, Soumyajit Maitra, Pietro P. Altermatt, Robert S. Weatherup, Matthew Wright, Ruy S. Bonilla

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  21. Mechanistic Understanding of Gas Sensing in Palladium Nanoparticles-Decorated Porous ZnO Nanosheets: Correlating Energy Barrier and Ionized Oxygen Species with Sensing Performance

    SSRN Electronic Journal · 2025-01-01

    Haeun Choa, Min Young Kim, Chul Oh Park, Dung Thi Hanh To, Nosang Vincent Myung, Kyu Hyoung Lee

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  22. Performance Enhancement of InGaZnO Thin-Film Transistors via Rapid Cooling Process and Their Application in Logic Circuits

    IEEE Transactions on Electron Devices · 2025-07-15

    Shuo Zhang, Bin Liu, Xianwen Liu, Xuyang Li, Dan Kuang, Qi Guo Yao, Congyang Wen, Xiaorui Zi, Ziyan Jia, Guangcai Yuan, Jian Guo, Ce Ning, Daiwei Shi, Feng Wang, Zhinong Yu

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  23. Retention framework for analysing trapping dynamics in solution-processed metal-oxide semiconductors

    NPG Asia Materials · 2025-11-07

    Dongwook Kim, Hyeonju Lee, Hyunji Shin, Youngjun Yun, Jin‐Hyuk Bae, Jaehoon Park

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  24. Mechanistic understanding of gas sensing in palladium nanoparticles-decorated porous ZnO nanosheets: Correlating energy barrier and ionized oxygen species with sensing performance

    Sensors and Actuators Reports · 2025-12-19

    Ha Eun Choa, Min Young Kim, Chul Oh Park, Dung Thi Hanh To, Nosang Vincent Myung, Kyu Hyoung Lee

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  25. Layer-Selective Crystallization of Indium–Gallium Oxide and Indium–Gallium–Zinc Oxide Bilayer Channel Induced by Annealing After UV Treatment for High-Performance Oxide Thin-Film Transistors

    ACS Applied Materials & Interfaces · 2026-03-12

    Je Moon Yun, Dong Keun Lee, Seok Gyu Hong, Yoo-Hwa Hwang, Hwa Seon Kim, Hwa Seon Kim, Kyu Min Kim, I. Sak Lee, Hyun Jae Kim, Hyun Jae Kim

    Read original paper ↗ ·
  26. Carbon Nanotube Doping by Prolonged Ultrasonication Treatment for Improving Electrical Properties of In 2 O 3 Thin-Film Transistors

    IEEE Transactions on Electron Devices · 2026-09-07

    Xiao-Lin Wang, Han-Lin Zhao, Sung‐Jin Kim

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