RESEARCH PAPER · IEEE Transactions on Electron Devices · 2026
Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs During 400 °C Postprocessing Forming Gas Annealing
Yu Hsin Kuo, Chengyang Zhang, Priyankka Gundlapudi Ravikumar, Sanghyun Kang, Taeyoung Song, Marco Antonio Villena, Luca Larcher, Hwan Kim, Minji Hong, Pilsang Yun, Gaurav Thareja, Shimeng Yu, Daewon Ha, Suman Datta, Julia E. Medvedeva, A. I. Khan
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