RESEARCH PAPER · Nature Communications · 2026
Atomic-scale mechanism unlocks thermal-stable high-κ performance in HfO2 via coherent interfaces
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Improved ferroelectric properties in lanthanide-doped HfO2 thin films epitaxially grown on yttria-stabilized zirconia substrates
Applied Physics Letters · 2026-06-22
Y H Ma, Xinyu Jiang, Z W Cui, Chengcheng Zeng, Jiufu Li, Y W Sun, Chenxi Ren, Haoyang Cui, Yuhao Yue, Weijie Zheng, Beibei Fu, Chunyan Zheng, Zheng Wen
Read original paper ↗ ·High-Performance 3-D Trench Hf 0.4 Zr 0.6 O 2 -Based Ferroelectric Capacitors With Ultra-Low Coercive Field (0.69 MV/cm) via Phase Boundary Engineering
IEEE Electron Device Letters · 2026-07-27
Puqi Hao, Sirui Zhang, Shuaizhi Zheng, Xinpeng Mu, Qiong Yang, Hongbo Li, Xingcheng Jin, Min Liao
Read original paper ↗ ·Morphotropic Phase Boundary Engineering in HfO2-Based High-k Dielectric Nanosystems for Dynamic Random-Access Memory Capacitors: A Review
ACS Applied Nano Materials · 2026-10-09
Hsien-Yang Liu, Thi Minh Thuan Nguyen, Prasannajeet Singh, Sourav De, Yannick Raffel, Maximilian Lederer, Yogesh Singh Chauhan, Chiung-Yuan Lin, Tian‐Li Wu
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