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RESEARCH PAPER · Materials Today Communications · 2025

Inverse design of GaN HEMT heterostructures via deep learning with enhanced auto-encoder framework

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Inverse design of GaN HEMT heterostructures via deep learning with enhanced auto-encoder frameworkOriginalAutoencoder: An efficient inverse design method for gallium nitride high electron mobility transistor structures0Device Structure Estimation by Inverse Calculation and Its Application to Semiconductor Manufacturing0

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  1. Autoencoder: An efficient inverse design method for gallium nitride high electron mobility transistor structures

    Engineering Applications of Artificial Intelligence · 2026-04-23

    Yan Pang, Meilan Hao, Shu Wei, L J Yu, Jufeng Han, Min Wu, Hong Qin, Weiwei Li

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  2. Device Structure Estimation by Inverse Calculation and Its Application to Semiconductor Manufacturing

    IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2026-05-24

    Tomohiko Mori, Ryosuke Okachi, Junya Muramatsu, Makoto Kuwahara, Daigo Kikuta, Takaaki Aoki, Satoshi Kojima, Fumitaka Kato, Takafumi Arakawa

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