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RESEARCH PAPER · APL Materials · 2025

Gallium oxide (Ga2O3) as a radiation detector distinguishing neutrons and gammas

D. J. Valdes, L. Rendón, J. Winkelbauer, P. Koehler, Sven C. Vogel, Ke-Xun Sun

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9 direct citing papers in this saved network. Explore the next layer with second-order citations.

Open in your workspace →Saved 2026-10-14 · complete coverage
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Gallium oxide (Ga2O3) as a radiation detector distinguishing neutrons and gammasOriginalGallium nitride (GaN) scintillation response to fast neutrons and flash gamma rays and associated broadband photoluminescence1Advanced BCl3-Driven Deep Ion Etching of β-Ga2O3 for Precision High-Aspect-Ratio Nanostructures0Deciphering the mechanism of enhanced scintillation properties in In-doped β -Ga 2 O 3 ultrafast scintillation crystal0Gamma Irradiation Effects on Surge Protective Components: A Comprehensive Experimental Evaluation of Transient and V–I Characteristics0From architectures to device physics: Pathways to integrate lateral, vertical, and heterogeneous schemes in gallium oxide transistors0Engineering the future with ultrawide-bandgap semiconductors0Structural and electronic modification in β-Ga2O3 thin films induced by hafnium incorporation0Radiation-induced defect dynamics in two-dimensional/three-dimensional systems: A dimensionality advantage preserved within patterned graphene–SiC heterostructures0In-situ Raman tomography of wide-bandgap homoepitaxial interfaces: A case study on 4H-SiC at elevated temperatures0

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9 direct citing papers saved.

  1. Gallium nitride (GaN) scintillation response to fast neutrons and flash gamma rays and associated broadband photoluminescence

    AIP Advances · 2025-05-01

    D. J. Valdes, L. Rendón, Stuart Miller, J. J. Castaneda, Charles Leak, Showera H. Haque, K. Gunthoti, Stephen Arthur Wender, J. Winkelbauer, S. N. Paneru, Hye Young Lee, Sven C. Vogel, Ke-Xun Sun

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  2. Advanced BCl3-Driven Deep Ion Etching of β-Ga2O3 for Precision High-Aspect-Ratio Nanostructures

    Sensors · 2025-10-27

    Badriyah Alhalaili

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  3. Deciphering the mechanism of enhanced scintillation properties in In-doped β -Ga 2 O 3 ultrafast scintillation crystal

    Optics Express · 2026-01-21

    Lin huang, Xianke Li, Chaoyi Zhan, Peng Sun, Qiancheng Fang, Jun Xu, Liang Wang Chen, Fangbao Wang, Naizhe Zhao, Xiaoping Ouyang, Bo Liu, Huili Tang

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  4. Gamma Irradiation Effects on Surge Protective Components: A Comprehensive Experimental Evaluation of Transient and V–I Characteristics

    IEEE Transactions on Device and Materials Reliability · 2026-03-17

    Konstantinos M. Gektidis, I. Kaissas, Thomas E. Tsovilis

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  5. From architectures to device physics: Pathways to integrate lateral, vertical, and heterogeneous schemes in gallium oxide transistors

    Applied Physics Reviews · 2026-04-16

    Jun Liu, Xueqiang Ji, Jing Chang, Shan Li, Maolin Zhang, Li-Li Yang, Zeng Liu, Yue Wang, Zhipeng Zhang, Xupeng Yang, Chee‐Keong Tan, Weihua Tang

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  6. Engineering the future with ultrawide-bandgap semiconductors

    APL Materials · 2026-05-01

    Man Hoi Wong, Elaheh Ahmadi, Oliver Bierwagen, Uttam Singisetti

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  7. Structural and electronic modification in β-Ga2O3 thin films induced by hafnium incorporation

    Applied Surface Science · 2026-05-05

    Asma O. Al Ghaithi, Nitul S. Rajput, Haila M. Aldosari

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  8. Radiation-induced defect dynamics in two-dimensional/three-dimensional systems: A dimensionality advantage preserved within patterned graphene–SiC heterostructures

    Physical Review Applied · 2026-07-07

    Anonymous, Jakub Jagiełło, Wiktoria Reddig, A. Dobrowolski, Tymoteusz Ciuk, Rafal Prokopowicz, Maciej Ziemba, M. Wzorek, Semir El-Ahmar

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  9. In-situ Raman tomography of wide-bandgap homoepitaxial interfaces: A case study on 4H-SiC at elevated temperatures

    Applied Surface Science · 2026-09-18

    Artur Dobrowolski, Tymoteusz Ciuk, Jakub Jagiełło, Karolina Piętak, Wawrzyniec Kaszub, Chowdam Venkata Prasad, Sang‐Mo Koo, Mirosław Szybowicz

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