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RESEARCH PAPER · IEEE Journal of Photovoltaics · 2020

Influence of the Carbon Concentration on (p) Poly-SiC x Layer Properties With Focus on Parasitic Absorption in Front Side Poly-SiC x /SiO x Passivating Contacts of Solar Cells

Jonathan Linke, Swetlana Weit, Johannes Rinder, Raphael Glatthaar, Søren Pape Møller, Giso Hahn, Barbara Terheiden

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Influence of the Carbon Concentration on (p) Poly-SiC x Layer Properties With Focus on Parasitic Absorption in Front Side Poly-SiC x /SiO x Passivating Contacts of Solar CellsOriginalLocalisation of front side passivating contacts for direct metallisation of high-efficiency c-Si solar cells21Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiOx passivating contacts724.18% efficiency TOPCon solar cells enabled by super hydrophilic carbon-doped polysilicon films combined with plated metal fingers13Silver Metallization with Controlled Etch Stop Using SiOx Layers in Passivating Contacts for Improved Silicon Solar Cell Performance9Achieving Excellent Surface Passivation with J 0,s Less Than 0.5 fA cm −2 Utilizing a Carbon‐Incorporated Intrinsic Polysilicon‐Based Tunnel Oxide Passivating Contact Structure3Highly Transparent Nanoscale Tunnel Oxide Polysilicon Passivated Contacts: Optimisation, Analysis, and Impact Study7TOPCon-based bottom cells for perovskite/silicon tandem solar cells10Compositional analysis of (p) a-SiCx:H emitter layers for enhanced short-circuit current density in SHJ solar cells1

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  1. Localisation of front side passivating contacts for direct metallisation of high-efficiency c-Si solar cells

    Solar Energy Materials and Solar Cells · 2021-10-26

    Frank Meyer, Andrea Ingenito, Juan Jose Diaz Leon, Xavier Niquille, Christophe Allebé, Sylvain Nicolay, Franz‐Josef Haug, Christophe Ballif

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  2. Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiOx passivating contacts

    Solar Energy Materials and Solar Cells · 2022-08-01

    Jonathan Linke, Raphael Glatthaar, Frank Huster, Tobias Okker, Søren Pape Møller, Giso Hahn, Barbara Terheiden

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  3. 24.18% efficiency TOPCon solar cells enabled by super hydrophilic carbon-doped polysilicon films combined with plated metal fingers

    Solar Energy Materials and Solar Cells · 2023-05-22

    Haojiang Du, Taiqiang Wang, Wei Liu, Yali Ou, Mengchao Xing, Weiguang Yang, Weiguang Yang, Jiang Sheng, Mingdun Liao, Zhijie Gu, Baojie Yan, Zhenhai Yang, Yuheng Zeng, Jichun Ye

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  4. Silver Metallization with Controlled Etch Stop Using SiOx Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

    Solar RRL · 2023-09-04

    Raphael Glatthaar, Franz-Philipp Schmidt, Adnan Hammud, Thomas Lunkenbein, Tobias Okker, Frank Huster, Sven Seren, Beatriz Cela Greven, Giso Hahn, Barbara Terheiden

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  5. Achieving Excellent Surface Passivation with J 0,s Less Than 0.5 fA cm −2 Utilizing a Carbon‐Incorporated Intrinsic Polysilicon‐Based Tunnel Oxide Passivating Contact Structure

    Small Methods · 2025-06-05

    Hongkai Zhou, Zunke Liu, Zhenhai Yang, Ruoyi Wang, Xian Zhang, Hongyu Zhang, Mingdun Liao, Wei Liu, Yuheng Zeng, Jichun Ye

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  6. Highly Transparent Nanoscale Tunnel Oxide Polysilicon Passivated Contacts: Optimisation, Analysis, and Impact Study

    Solar RRL · 2025-07-14

    Kean Chern Fong, Stephane Armand, Rabin Basnet, Di Yan, Marco Ernst, Gabriel Bartholazzi, Anitta Rose Varghese, Muhammad Faheem Maqsood, Felipe Kremer, Jiali Wang, Zhongshu Yang, Heping Shen, James Bullock, Peiting Zheng, Jie Yang, Xinyu Zhang, Daniel Macdonald

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  7. TOPCon-based bottom cells for perovskite/silicon tandem solar cells

    Joule · 2026-03-27

    Rabin Basnet, Zhongshu Yang, Viqar Uddin Ahmad, Nathan Chang, Kean Chern Fong, Di Yan, Jungan Wang, Menglei Xu, Jie Yang, Xinyu Zhang, Hao Jin, James Bullock, Klaus Weber, Heping Shen, Daniel Macdonald

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  8. Compositional analysis of (p) a-SiCx:H emitter layers for enhanced short-circuit current density in SHJ solar cells

    Materials Science in Semiconductor Processing · 2026-06-25

    Arghavan Salimi, Salar Habibpur Sedani, Milad Ghasemi, Seda Kilickaya Unver, Ergi Dönerçark, Mehmet Koç, İlker Yıldız, Valérie Depauw, Hariharsudan Sivaramakrishnan Radhakrishnan, Hisham Nasser, Raşit Turan

    Read original paper ↗ ·
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