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RESEARCH PAPER · IEEE Transactions on Electron Devices · 2020

Oxygen Radical Control via Atmospheric Pressure Plasma Treatment for Highly Stable IGZO Thin-Film Transistors

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Oxygen Radical Control via Atmospheric Pressure Plasma Treatment for Highly Stable IGZO Thin-Film TransistorsOriginalConductive Polymer-Assisted Metal Oxide Hybrid Semiconductors for High-Performance Thin-Film Transistors17Spray‐Pyrolyzed High‐k Zirconium‐Aluminum‐Oxide Dielectric for High Performance Metal‐Oxide Thin‐Film Transistors for Low Power Displays50Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma28Improvement of metal-oxide films by post atmospheric Ar/O2 plasma treatment for thin film transistors with high mobility and excellent stability50Verification of Carrier Concentration‐Dependent Behavior in Water‐Infiltration‐Induced Electricity Generation by Ionovoltaic Effect33Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric8Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load Inverters25Study of oxygen plasma treatment on solution-processed SnO x thin-film transistors8Improvement of properties of top-gate IGZO TFT by oxygen-rich ultrathin in situ ITO active layer11Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors With SiAlO X Dielectric8Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination2Ionovoltaics in energy harvesting and applications: A journey from early development to current state‐of‐the‐art13Water evaporation systems for the simultaneous generation of electricity and water desalination: a review38Generation of InGaZnO Nanoparticle by Ar/O 2 Plasma Exposure for Performance Improvement of Oxide TFTs10Quantitative Insight of Annealing Atmosphere-Induced Device Performance and Bias Stability in a Ga-Doped InZnSnO Thin-Film Transistors10Improving the photoswitching performance of a transistor with amorphous metal oxide semiconductor thin film by a gradient annealing approach4Unveiling the Unique Region Dependence of Bias Stability in Sub-μm IGZO TFTs Using Floating Channel Effect for 3D DRAM9Process-Driven Enhancement of Contact and Reliability Characteristics in Self-Aligned Top-Gate GIZO TFTs via Over-Etching and Ultra-Thin SiO2 Interlayers0Highly Robust Spray‐Pyrolyzed Al2O3 Gate Insulator for Flexible a‐IGZO Thin‐Film Transistors for Low‐Power Displays4High‐Performance Stable Hybrid Inorganic‐Organic Light‐Emitting Transistor5Amorphous indium gallium zinc oxide thin film transistors (a-IGZO-TFTs): Exciting prospects and fabrication challenges21van der Waals Lamination for Effective Bottom Channel Modulation of Oxide Transistors4Reliability Strategies for a-IGZO Thin-Film Transistors Under Stress Environments3Multispectral Oxide Phototransistor Array via Electrohydrodynamic Subpixel QD Patterning and Engineered IGZO Channels for Persistent Photoconductivity Suppression3Synergistic work function modulation and interface traps suppression in CuCrO2/β-Ga2O3 p-n heterojunction diodes through oxygen vacancy passivation1Soft-Chilled Amorphous Indium Gallium Zinc Oxide Semiconductors Enable High-Performance Digital Circuits With Excellent Long-Term Stability0Developing a Soft-Chilling Preannealing Treatment to Improve Performance in Photoresponsive TFTs Based on Amorphous IGZO Semiconductor Films0Process‐Driven Enhancement of Contact and Reliability Characteristics in Self‐Aligned Top‐Gate In–Ga–Zn–O Thin‐Film Transistors via Overetching and Ultrathin SiO 2 Interlayers0

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  1. Conductive Polymer-Assisted Metal Oxide Hybrid Semiconductors for High-Performance Thin-Film Transistors

    ACS Applied Materials & Interfaces · 2021-02-10

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  2. Spray‐Pyrolyzed High‐k Zirconium‐Aluminum‐Oxide Dielectric for High Performance Metal‐Oxide Thin‐Film Transistors for Low Power Displays

    Advanced Materials Interfaces · 2021-07-28

    Md Mobaidul Islam, Jewel Kumer Saha, Md. Mehedi Hasan, Junyeong Kim, Ravindra Naik Bukke, Arqum Ali, Jin Hyuk Jang

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  3. Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

    Coatings · 2021-07-29

    Chea-Young Lee, Young-Hee Joo, Minsoo P. Kim, Doo‐Seung Um, Chang-Il Kim

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  4. Improvement of metal-oxide films by post atmospheric Ar/O2 plasma treatment for thin film transistors with high mobility and excellent stability

    Applied Surface Science · 2021-08-16

    Ravindra Naik Bukke, Narendra Naik Mude, Md Mobaidul Islam, Jin Hyuk Jang

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  5. Verification of Carrier Concentration‐Dependent Behavior in Water‐Infiltration‐Induced Electricity Generation by Ionovoltaic Effect

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    Huding Jin, Jun‐Woo Park, Sun Geun Yoon, Won Hyung Lee, Yong Hyun Cho, Junghyup Han, Zhenxing Yin, Youn Sang Kim

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  6. Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric

    IEEE Journal of the Electron Devices Society · 2022-01-01

    Wanpeng Zhao, Ning Zhang, Xinyu Zhang, Chong Yao, Junfeng Zhang, Shurong Dong, Yang Liu, Zhi Ye, Jikui Luo

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  7. Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load Inverters

    IEEE Transactions on Electron Devices · 2022-02-18

    Jae‐Yun Lee, Gergely Tarsoly, Fei Shan, Sung‐Jin Kim

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  8. Study of oxygen plasma treatment on solution-processed SnO x thin-film transistors

    Journal of Physics D Applied Physics · 2022-05-13

    Yajie Ren, Danna Zhang, Yanan Ding, Ao Liu, Fukai Shan

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  9. Improvement of properties of top-gate IGZO TFT by oxygen-rich ultrathin in situ ITO active layer

    Japanese Journal of Applied Physics · 2022-05-16

    Cong Peng, Meng Xu, Longlong Chen, Xifeng Li, Jianhua Zhang

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  10. Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors With SiAlO X Dielectric

    IEEE Transactions on Electron Devices · 2022-12-29

    Wanpeng Zhao, Ning Zhang, Chong Yao, Junfeng Zhang, Tianfeng Huang, Yang Liu, Shurong Dong, Zhi Ye, Jikui Luo

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  11. Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination

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    Xiaoming Huang, Wei Cao, Chen-Yang Huang, Chen Chen, Zheng Shi, Weizong Xu

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  12. Ionovoltaics in energy harvesting and applications: A journey from early development to current state‐of‐the‐art

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    Won Hyung Lee, Junwoo Park, Sun Geun Yoon, Huding Jin, Junghyup Han, Youn Sang Kim

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    Journal of Materials Chemistry A · 2024-01-01

    Yongcheng Wang, Jingge Ju, Wenju Zhu, Yujing Liu, Yan Zhang, Weimin Kang, Bowen Cheng

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  14. Generation of InGaZnO Nanoparticle by Ar/O 2 Plasma Exposure for Performance Improvement of Oxide TFTs

    IEEE Transactions on Electron Devices · 2024-05-29

    Myeonggi Jeong, Junyeong Kim, Jinbaek Bae, Md Mobaidul Islam, Jiseob Lee, Sabiqun Nahar, Sunaina Priyadarshi, Jin Hyuk Jang

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  15. Quantitative Insight of Annealing Atmosphere-Induced Device Performance and Bias Stability in a Ga-Doped InZnSnO Thin-Film Transistors

    IEEE Transactions on Electron Devices · 2024-07-18

    Nayoung Choi, Min Jung Kim, Hyunmin Hong, Dong Yeob Shin, Jinyoung Go, Teklebrahan Gebrekrstos Weldemhret, Kwangsik Jeong, Kwun‐Bum Chung

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  16. Improving the photoswitching performance of a transistor with amorphous metal oxide semiconductor thin film by a gradient annealing approach

    Optical Materials · 2024-10-21

    Gergely Tarsoly, Jae‐Yun Lee, Sung‐Jin Kim

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  17. Unveiling the Unique Region Dependence of Bias Stability in Sub-μm IGZO TFTs Using Floating Channel Effect for 3D DRAM

    IEEE Electron Device Letters · 2024-12-11

    Yanyu Yang, Gangping Yan, Jie Luo, Yupeng Lu, Yunjiao Bao, Chuqiao Niu, Xueli Ma, Jinjuan Xiang, Gaobo Xu, Guilei Wang, Chao Zhao, Huaxiang Yin

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  18. Process-Driven Enhancement of Contact and Reliability Characteristics in Self-Aligned Top-Gate GIZO TFTs via Over-Etching and Ultra-Thin SiO2 Interlayers

    SSRN Electronic Journal · 2025-01-01

    Sung-Hwan Choi, Insoo Ahn, Byeong Kwon Ju

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  19. Highly Robust Spray‐Pyrolyzed Al2O3 Gate Insulator for Flexible a‐IGZO Thin‐Film Transistors for Low‐Power Displays

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    Kiwan Ahn, Md Mobaidul Islam, Yeoungjin Chang, Jin Hyuk Jang

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  20. High‐Performance Stable Hybrid Inorganic‐Organic Light‐Emitting Transistor

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    Huixue Huang, Zhagen Miao, Haikuo Gao, Jin Cao, Yanqiong Zheng, Can Gao, Xifeng Li, Guangcai Yuan, Huanli Dong

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  21. Amorphous indium gallium zinc oxide thin film transistors (a-IGZO-TFTs): Exciting prospects and fabrication challenges

    Microelectronic Engineering · 2025-02-08

    J. Ajayan, S. Sreejith, N. Aruna Kumari, M. Manikandan, Sachidananda Sen, Maneesh Kumar

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  22. van der Waals Lamination for Effective Bottom Channel Modulation of Oxide Transistors

    Nano Letters · 2025-03-27

    Xiaokun Yang, Donglin Lu, Rui Ying He, Chen Yang, Zheyi Lu, Liting Liu, Songlong Liu, Quanyang Tao, Likuan Ma, Shuimei Ding, Xiao Liu, Yunxin Li, Yiliu Wang, Lei Liao, Yuan Liu

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  23. Reliability Strategies for a-IGZO Thin-Film Transistors Under Stress Environments

    Transactions on Electrical and Electronic Materials · 2026-01-06

    Suji Choi, Yunhui Jang, Yumeng Guo, Y.T. Kim, Jang‐Kun Song, Junsin Yi

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  24. Multispectral Oxide Phototransistor Array via Electrohydrodynamic Subpixel QD Patterning and Engineered IGZO Channels for Persistent Photoconductivity Suppression

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  25. Synergistic work function modulation and interface traps suppression in CuCrO2/β-Ga2O3 p-n heterojunction diodes through oxygen vacancy passivation

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    Ying Li, Yingzhen Lin, Ze Yang, Ze Yang, Jialong Lin, Yujian Chen, Feng Zhang, Weifeng Yang

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  26. Soft-Chilled Amorphous Indium Gallium Zinc Oxide Semiconductors Enable High-Performance Digital Circuits With Excellent Long-Term Stability

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  27. Developing a Soft-Chilling Preannealing Treatment to Improve Performance in Photoresponsive TFTs Based on Amorphous IGZO Semiconductor Films

    IEEE Transactions on Electron Devices · 2026-05-06

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  28. Process‐Driven Enhancement of Contact and Reliability Characteristics in Self‐Aligned Top‐Gate In–Ga–Zn–O Thin‐Film Transistors via Overetching and Ultrathin SiO 2 Interlayers

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