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RESEARCH PAPER · Acta Materialia · 2020

Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands

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Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islandsOriginalABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing151Permanent charged domain walls under tip-poling engineering11Current Rectification, Resistive Switching, and Stable NDR Effect in BaTiO3/CeO2 Heterostructure Devices35Topological polar structures in ferroelectric oxide films27A Comprehensive FIB Lift-out Sample Preparation Method for Scanning Probe Microscopy4Interfacial‐Strain‐Controlled Ferroelectricity in Self‐Assembled BiFeO3 Nanostructures13Effect of Oxygen Vacancy on the Conduction Modulation Linearity and Classification Accuracy of Pr0.7Ca0.3MnO3 Memristor18Microscopic physical origin of polarization induced large tunneling electroresistance in tetragonal-phase BiFeO311The resistance switching of BiFeO3-Nia/b/La0.7Sr0.3MnO3 was enhanced by regulating the ferroelectric polarization1Controllable electrical, magnetoelectric and optical properties of BiFeO3 via domain engineering146Photoenhanced Electroresistance at Dislocation-Mediated Phase Boundary6Ferroelectric diode characteristic and tri-state memory in self-assembled BiFeO3 nanoislands with cross-shaped domain structure6Entangled polarizations in ferroelectrics: A focused review of polar topologies59Multifunctional BiFeO3 Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems22Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite7Review on Resistive Switching Devices Based on Multiferroic BiFeO329Templated growth strategy for highly ordered topological ferroelectric quad-domain textures13Top electrode dependence of the write-once-read-many-times resistance switching in BiFeO3 films0In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film14Creating charged domain walls in PbTiO3/LaCoO2.5 superlattices by oxygen vacancy engineering3Comprehensive investigation into the influence of oxygen vacancies on the ferroelectric properties of spin coated bismuth ferrite thin films13Large resistive switching in ultrathin BiFeO3 thin films6Resistive Switching Characteristics of NiO Thin Films Influenced by Changes in the Diameter of Nanometer-Scale Top Electrodes4Observation of multi-order polar radial vortices and their topological transition8Electrostatic nano-mask patterned 180° domain walls in a ferroelectric film4Manipulation of magnetic properties by electric field in epitaxial Fe/BTO/Nb:STO film1Three-fold domain-wall topologies in BiFeO3/DyScO3(110) heterostructure0

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  1. ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing

    Nanoscale Horizons · 2021-01-01

    Bai Tao Sun, Guangdong Zhou, Linfeng Sun, Hongbin Zhao, Yuanzheng Chen, Feng Yang, Yong Xiang Zhao, Qunliang Song

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  2. Permanent charged domain walls under tip-poling engineering

    Journal of Materials Chemistry C · 2021-01-01

    Wenping Geng, Xiaojun Qiao, Jinlong He, Linyu Mei, Kaixi Bi, Xiangjian Wang, Xiujian Chou

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  3. Current Rectification, Resistive Switching, and Stable NDR Effect in BaTiO3/CeO2 Heterostructure Devices

    Advanced Electronic Materials · 2021-05-09

    Shania Rehman, Honggyun Kim, Harshada Patil, Kalyani D. Kadam, Rizwan Ur Rehman Sagar, Jamal Aziz, Doo‐Seung Um, Muhammad Farooq Khan, Deok‐kee Kim

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  4. Topological polar structures in ferroelectric oxide films

    Journal of Applied Physics · 2021-05-27

    Yun‐Long Tang, Yin‐Lian Zhu, Xiuliang Ma

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  5. A Comprehensive FIB Lift-out Sample Preparation Method for Scanning Probe Microscopy

    Nanomanufacturing and Metrology · 2021-06-10

    Fan Ji, Yin Yao, Tongzheng Xin, Jan Seidel

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  6. Interfacial‐Strain‐Controlled Ferroelectricity in Self‐Assembled BiFeO3 Nanostructures

    Advanced Functional Materials · 2021-06-17

    Jingfeng Song, Shihao Zhuang, Michael S. Martin, Luis A. Ortiz‐Flores, Binod Paudel, Dmitry Yarotski, Jia‐Mian Hu, Aiping Chen, Bryan D. Huey

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  7. Effect of Oxygen Vacancy on the Conduction Modulation Linearity and Classification Accuracy of Pr0.7Ca0.3MnO3 Memristor

    Nanomaterials · 2021-10-12

    Yeon Pyo, Jong–Un Woo, Hyun-Gyu Hwang, Sahn Nahm, Jichai Jeong

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  8. Microscopic physical origin of polarization induced large tunneling electroresistance in tetragonal-phase BiFeO3

    Acta Materialia · 2021-12-18

    Jing Wang, Yuanyuan Fan, Yan Li Song, Jialu Wu, Ruixue Zhu, Rongzhen Gao, Cancan Shao, Houbing Huang, Peng Dong Gao, Ben Xu, Jing Ma, Jinxing Zhang, Ce‐Wen Nan

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  9. The resistance switching of BiFeO3-Nia/b/La0.7Sr0.3MnO3 was enhanced by regulating the ferroelectric polarization

    Ceramics International · 2022-01-05

    Xixi Ren, Guoqiang Tan, Jincheng Li, Di Ao, Chenjun Liu, Huijun Ren, Ao Xia, Wenlong Liu

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  10. Controllable electrical, magnetoelectric and optical properties of BiFeO3 via domain engineering

    Progress in Materials Science · 2022-03-17

    Yiqian Liu, Yao Wang, Ji Ma, Shun Li, Hao Pan, Ce‐Wen Nan, Yuanhua Lin

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  11. Photoenhanced Electroresistance at Dislocation-Mediated Phase Boundary

    ACS Applied Materials & Interfaces · 2022-04-17

    Jing Wang, Ruixue Zhu, Ji Ma, Ji Ma, Huayu Yang, Yuanyuan Fan, Mingfeng Chen, Yuanwei Sun, Peng Gao, Houbing Huang, Jinxing Zhang, Jing Ma, Jing Ma, Ce‐Wen Nan

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  12. Ferroelectric diode characteristic and tri-state memory in self-assembled BiFeO3 nanoislands with cross-shaped domain structure

    Applied Physics Letters · 2022-07-25

    Xiang Zhou, Haoyang Sun, Zhen Lin Luo, Haoyu Zhao, Deshan Liang, Hasnain Mehdi Jafri, Houbing Huang, Yuewei Yin, Xiaoguang Li

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  13. Entangled polarizations in ferroelectrics: A focused review of polar topologies

    Acta Materialia · 2022-10-27

    Yujia Wang, Yun‐Long Tang, Yin‐Lian Zhu, Xiuliang Ma

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  14. Multifunctional BiFeO3 Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems

    ACS Applied Electronic Materials · 2022-12-08

    Chandra Prakash, Ambesh Dixit

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  15. Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite

    Sensors · 2023-01-03

    А. С. Абрамов, Boris N. Slautin, Victoria I. Pryakhina, V. Ya. Shur, Andréi L. Kholkin, Denis Alikin

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  16. Review on Resistive Switching Devices Based on Multiferroic BiFeO3

    Nanomaterials · 2023-04-10

    Xianyue Zhao, Stephan Menzel, Ilia Polian, Heidemarie Schmidt, Nan Du

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  17. Templated growth strategy for highly ordered topological ferroelectric quad-domain textures

    Applied Physics Reviews · 2023-05-30

    Guo Tian, Xin Yi, Zhiqing Song, Wenda Yang, Jianbiao Xian, Jun Jin, Shuai Ning, Zhipeng Hou, Deyang Chen, Zhen Hong Fan, Minghui Qin, Guofu Zhou, Jiyan Dai, Xingsen Gao, Jun‐Ming Liu

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  18. Top electrode dependence of the write-once-read-many-times resistance switching in BiFeO3 films

    Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2023-09-01

    Yajun Fu, Wei Tang, Jin Wang, Linhong Cao

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  19. In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

    Nature Communications · 2023-12-09

    Xiangbin Cai, Chao Chen, Lin Hua Xie, Chang‐An Wang, Zixin Gui, Yuan Gao, Ulrich Kentsch, Guofu Zhou, Xingsen Gao, Yu Chen, Shengqiang Zhou, Weibo Gao, Jun‐Ming Liu, Ye Zhu, Deyang Chen

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  20. Creating charged domain walls in PbTiO3/LaCoO2.5 superlattices by oxygen vacancy engineering

    Physical review. B./Physical review. B · 2024-01-08

    Zhong Fang, Yujia Wang, Xiangwei Guo, Yun‐Long Tang, Yin‐Lian Zhu, Xiuliang Ma

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  21. Comprehensive investigation into the influence of oxygen vacancies on the ferroelectric properties of spin coated bismuth ferrite thin films

    Physica Scripta · 2024-05-23

    N. V. Srihari, Sumanth Bayari, Santhosh Kumar M V, Mahesh Padaki, K.K. Nagaraja

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  22. Large resistive switching in ultrathin BiFeO3 thin films

    Journal of Applied Physics · 2024-10-15

    Zhijun Ma, Zhiwei Wang, Qi Zhang, Yizhong Guo, Peng Zhou, Kun Liang, Tianjin Zhang, V. Nagarajan

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  23. Resistive Switching Characteristics of NiO Thin Films Influenced by Changes in the Diameter of Nanometer-Scale Top Electrodes

    The Journal of Physical Chemistry Letters · 2024-10-24

    Eunmi Lee, Jong Yeog Son

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  24. Observation of multi-order polar radial vortices and their topological transition

    Nature Communications · 2025-03-21

    Wan‐Rong Geng, Xiangwei Guo, Yin‐Lian Zhu, Desheng Ma, Yun‐Long Tang, Yujia Wang, Yongjun Wu, Zijian Hong, Xiuliang Ma

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  25. Electrostatic nano-mask patterned 180° domain walls in a ferroelectric film

    Science Advances · 2025-06-11

    Xiangbin Cai, Yueze Tan, Chao Chen, Chao Chen, Changsheng Chen, Changsheng Chen, Xiangli Che, Chao Xu, Yan Zhao, Haiyang Pan, Yaoding Lou, Jefferson Zhe Liu, Jesús Zúñiga-Pérez, Weibo Gao, Long‐Qing Chen, Jun‐Ming Liu, Deyang Chen, Ye Zhu

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  26. Manipulation of magnetic properties by electric field in epitaxial Fe/BTO/Nb:STO film

    Solid State Communications · 2025-11-05

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  27. Three-fold domain-wall topologies in BiFeO3/DyScO3(110) heterostructure

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