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RESEARCH PAPER · IEEE Transactions on Electron Devices · 2019

Toward Microwave S- and X-Parameter Approaches for the Characterization of Ferroelectrics for Applications in FeFETs and NCFETs

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10 direct citing papers in this saved network. Explore the next layer with second-order citations.

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Toward Microwave S- and X-Parameter Approaches for the Characterization of Ferroelectrics for Applications in FeFETs and NCFETsOriginalGate-Induced Drain Leakage in Negative Capacitance FinFETs32RF Performance Projections of Negative-Capacitance FETs: fT , f max, and gmfT/ID17Negative-Capacitance FETs for Advanced Nodes: Circuit Performance and Variability Analysis with Ferroelectric Dynamic Switching3[Retracted] Realization of a Noncontact IC Chip with Embedded Ferroelectric Memory in an Auxiliary Timing Device for Sports Games1Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET15Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications50On the Existence of Negative Capacitance: Examining Ferroelectric-Dielectric Stack Experiments Using the NLS and LK Models0Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs2Negative‐Capacitance Field‐Effect Transistor for Optimization of Power Factor for Modern Applications0Negative‐Capacitance FET0

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  1. Gate-Induced Drain Leakage in Negative Capacitance FinFETs

    IEEE Transactions on Electron Devices · 2020-02-10

    Amol D. Gaidhane, Girish Pahwa, Amit Kumar Verma, Yogesh Singh Chauhan

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  2. RF Performance Projections of Negative-Capacitance FETs: fT , f max, and gmfT/ID

    IEEE Transactions on Electron Devices · 2020-06-24

    Ji Kai Wang, Prasad S. Gudem, Thomas Cam, Zhi Cheng Yuan, Michael Wong, Kyle David Holland, Diego Kienle, Mani Vaidyanathan

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  3. Negative-Capacitance FETs for Advanced Nodes: Circuit Performance and Variability Analysis with Ferroelectric Dynamic Switching

    International Conference on Simulation of Semiconductor Processes and Devices · 2021-09-27

    Yen-Kai Lin, Jing Wang, Takeshi Okagaki, Seonghoon Jin, Anh-Tuan Pham, Yonghee Park, Uihui Kwon, Woosung Choi, Dae Sin Kim

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  4. [Retracted] Realization of a Noncontact IC Chip with Embedded Ferroelectric Memory in an Auxiliary Timing Device for Sports Games

    Journal of Nanomaterials · 2022-01-01

    Jian Chen

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  5. Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

    Silicon · 2022-02-22

    R. Deepa, M. Parimala Devi, N. Arun Vignesh, Sivaraman Kanithan

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  6. Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications

    Materials Today Communications · 2023-02-10

    J. Ajayan, P. Mohankumar, D. Nirmal, L. M. I. Leo Joseph, Sandip Bhattacharya, S. Sreejith, Sreedhar Kollem, Shashank Rebelli, Shubham Tayal, B. Mounika

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  7. On the Existence of Negative Capacitance: Examining Ferroelectric-Dielectric Stack Experiments Using the NLS and LK Models

    IEEE Transactions on Electron Devices · 2023-06-14

    Thomas Cam, Jacob Byers, Ji Kai Wang, Collin VanEssen, Prasad S. Gudem, Diego Kienle, Mani Vaidyanathan

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  8. Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs

    Solid-State Electronics · 2024-03-30

    Khoirom Johnson Singh, Lomash Chandra Acharya, Anand Bulusu, Sudeb Dasgupta

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  9. Negative‐Capacitance Field‐Effect Transistor for Optimization of Power Factor for Modern Applications

    Unknown journal · 2025-03-14

    Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Hanumant Lal, Srinivasa Rao Karumuri

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  10. Negative‐Capacitance FET

    Unknown journal · 2026-10-02

    Katuri Yeshwanth, Sanket Saxena, Suman Lata Tripathi, Balwinder Raj

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