RESEARCH PAPER · Journal of Solid State Chemistry · 2016
The structure and band gap design of high Si doping level Ag1−xGa1−xSixSe2 (x=1/2)
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Synthesis and structure of novel Ag 2 Ga 2 SiSe 6 crystals: promising materials for dynamic holographic image recording
RSC Advances · 2016-01-01
O.V. Parasyuk, Volodymyr Pavlyuk, Oleg Yu Khyzhun, В.Р. Козер, G.L. Myronchuk, V.P. Sachanyuk, Grygoriy Dmytriv, A.S. Krymus, Ivan V. Kityk, Ahmed M. El-Naggar, A.A. Albassam, Michał Piasecki
Read original paper ↗ ·ChemInform Abstract: The Structure and Band Gap Design of High Si Doping Level Ag1‐xGa1‐xSixSe2 (x = 1/2).
ChemInform · 2016-06-01
Shiyan Zhang, Dajiang Mei, Xin Du, Zheshuai Lin, Junbo Zhong, Yuandong Wu, Jingli Xu
Read original paper ↗ ·Wide band gap design of new chalcogenide compounds: KSrPS 4 and CsBaAsS 4
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Read original paper ↗ ·Pb0.65Mn2.85Ga3S8 and Pb0.72Mn2.84Ga2.95Se8: Two Quaternary Metal Chalcognides with Open-Tunnel-Framework Structures Displaying Intense Second Harmonic Generation Responses and Interesting Magnetic Properties
Inorganic Chemistry · 2017-06-23
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Read original paper ↗ ·New quaternary thallium indium germanium selenide TlInGe 2 Se 6 : Crystal and electronic structure
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Read original paper ↗ ·Thallium indium germanium sulphide (TlInGe2S6) as efficient material for nonlinear optical application
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Read original paper ↗ ·New quaternary sulfide LiGaSiS4: Synthesis, structure and optical properties
Journal of Solid State Chemistry · 2022-05-10
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Read original paper ↗ ·Passivating Sn Zn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells
Advanced Functional Materials · 2023-12-06
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Read original paper ↗ ·Effectively designing infrared nonlinear optical materials with magnetism, MMn 6 Ga 6 S 16 (M = Ca, Sr, Ba, and Pb), aided by stable open frameworks
Inorganic Chemistry Frontiers · 2024-01-01
Kaixuan Li, Yujie Zhang, Xianchao Zhu, Hongping Wu, Zhanggui Hu, Jiyang Wang, Yicheng Wu
Read original paper ↗ ·First-principles investigation of InAgASe4 (A = Ge, Sn) quaternary chalcogenides: Unveiling electronic, optical, and thermoelectric features
Chemical Physics Letters · 2024-02-09
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