RESEARCH PAPER · Elsevier eBooks · 2010
Ternary and Quaternary Chalcogenides of Si, Ge, Sn, Pb, and In
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Crystal structure of ∼RCu3S3 and ∼RCuTe2 (R=Gd–Lu) compounds
Journal of Solid State Chemistry · 2011-12-13
Lubomir D. Gulay, Marek Daszkiewicz, V.Ya. Shemet
Read original paper ↗ ·Crystal structures and magnetic properties of R2PbSi2S8 (R=Y, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho), R2PbSi2Se8 (R=La, Ce, Pr, Nd, Sm, Gd) and R2PbGe2S8 (R=Ce, Pr) compounds
Journal of Alloys and Compounds · 2012-01-03
Marek Daszkiewicz, О.V. Marchuk, Lubomir D. Gulay, D. Kaczorowski
Read original paper ↗ ·Crystal structure and magnetic properties of R3Mn0.5GeS7 (R=Y, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho and Er)
Journal of Alloys and Compounds · 2014-05-10
Marek Daszkiewicz, О.V. Marchuk, Lubomir D. Gulay, D. Kaczorowski
Read original paper ↗ ·Crystal structure and magnetic properties of R3Fe0.5GeS7 (R = Y, La, Ce, Pr, Sm, Gd, Tb, Dy, Ho, Er and Tm)
Journal of Alloys and Compounds · 2014-07-18
Marek Daszkiewicz, Yu. O. Pashynska, О.V. Marchuk, Lubomir D. Gulay, D. Kaczorowski
Read original paper ↗ ·Crystal structure of R3Mg0.5DSe7 (R = Ce, Pr; D = Si, Ge)
Chemistry of Metals and Alloys · 2015-01-01
O. M. Strok, Marek Daszkiewicz, Lubomir D. Gulay
Read original paper ↗ ·Quaternary R2X3PbXZX2 (X=S, Se; Z=Si, Ge, Sn) Chalcogenides
Elsevier eBooks · 2015-01-01
Lubomir D. Gulay, Marek Daszkiewicz, О.V. Marchuk
Read original paper ↗ ·The Y 2 S 3 –La 2 S 3 –GeS 2 system at 770 K
Journal of Alloys and Compounds · 2016-12-23
Олександр Вікторович Смітюх, O.V. Marchuk, Ivan D. Olekseyuk, Lubomir D. Gulay
Read original paper ↗ ·Charge Transport and Thermoelectric Properties of Ge-Doped Famatinites Cu3Sb1−yGeyS4
Electronic Materials Letters · 2021-05-26
Ji-Hee Pi, Go‐Eun Lee, Il‐Ho Kim
Read original paper ↗ ·Effects of Ge Doping on the Charge Transport and Thermoelectric Properties of Permingeatites Cu3Sb1−yGeySe4
대한금속재료학회지 · 2021-06-02
Ji-Hee Pi, Go‐Eun Lee, Il‐Ho Kim
Read original paper ↗ ·Are Selenides the Same as Sulfides? Structure, Spectroscopy, and Properties of Narrow-Gap Rare-Earth Semiconductors RE2Sn(S1–xSex)5 (RE = La, Ce; x = 0–0.8)
Inorganic Chemistry · 2024-05-24
Trinanjan Dey, Dundappa Mumbaraddi, Fuwei Wen, Vidyanshu Mishra, Vladimir K. Michaelis, Arthur Mar
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